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RFMD(威讯联合半导体)参数选型 > High Power GaN Unmatched Transistors > High Power GaN Unmatched Transistors >
Part Number |
Description |
DrainEfficiency(%) |
Gain(dB) |
Idq(mA) |
MaxFrequency(MHz) |
MinFrequency(MHz) |
PSAT(dBm) |
Packing & Shipping Details |
Pkg Type |
VD(V) |
系列 |
Datasheet |
RFHA1101SB |
4.3W, GaN on SiC Pow. Amp, Die o Carrier |
60 |
21 |
44 |
6000 |
0 |
36 |
Standard 5 Piece Box Shipping From Germany |
Bare Die |
28 |
RFHA1101 |
|
RFHA1101SQ |
4.3W, GaN on SiC Pow. Amp, Die o Carrier |
60 |
21 |
44 |
6000 |
0 |
36 |
Standard 25 Piece Bag Shipping From Germany |
Bare Die |
28 |
RFHA1101 |
|